IRLZ14STRLPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 1943 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.74 EUR |
| 10+ | 3.07 EUR |
| 100+ | 2.39 EUR |
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Technische Details IRLZ14STRLPBF Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V, Power Dissipation (Max): 3.7W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.
Weitere Produktangebote IRLZ14STRLPBF
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IRLZ14STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH Si 60V 10A 3-Pin(2+Tab) D2PAK T/R |
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IRLZ14STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH Si 60V 10A 3-Pin(2+Tab) D2PAK T/R |
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| IRLZ14STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; D2PAK,TO263 Mounting: SMD On-state resistance: 0.28Ω Type of transistor: N-MOSFET Power dissipation: 43W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 40A Case: D2PAK; TO263 Drain-source voltage: 60V Drain current: 10A Anzahl je Verpackung: 1 Stücke |
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IRLZ14STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRLZ14STRLPBF | Hersteller : Vishay Semiconductors |
MOSFET RECOMMENDED ALT IRLZ14SPBF |
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| IRLZ14STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 40A; 43W; D2PAK,TO263 Mounting: SMD On-state resistance: 0.28Ω Type of transistor: N-MOSFET Power dissipation: 43W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 40A Case: D2PAK; TO263 Drain-source voltage: 60V Drain current: 10A |
Produkt ist nicht verfügbar |