IRLZ34S
Hersteller: auf Bestellung 953 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details IRLZ34S
Description: MOSFET N-CH 60V 30A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V, Power Dissipation (Max): 3.7W (Ta), 88W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.
Weitere Produktangebote IRLZ34S
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IRLZ34S | Hersteller : Vishay |
Trans MOSFET N-CH Si 60V 30A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRLZ34S | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 30A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
Produkt ist nicht verfügbar |