ISL6612BCR-T Renesas Electronics America Inc
Hersteller: Renesas Electronics America IncDescription: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 7V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 26ns, 18ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 1.25A, 2A
DigiKey Programmable: Not Verified
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Technische Details ISL6612BCR-T Renesas Electronics America Inc
Description: IC GATE DRVR HALF-BRIDGE 10DFN, Packaging: Tape & Reel (TR), Package / Case: 10-VFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 0°C ~ 125°C (TJ), Voltage - Supply: 7V ~ 13.2V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 36 V, Supplier Device Package: 10-DFN (3x3), Rise / Fall Time (Typ): 26ns, 18ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 1.25A, 2A, DigiKey Programmable: Not Verified.