ISL89412IBZ
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 5386 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 5386 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details ISL89412IBZ
Description: IC DRVR MOSFET DUAL-CH 8-SOIC, Part Status: Active, Current - Peak Output (Source, Sink): 2A, 2A, Logic Voltage - VIL, VIH: 0.8V, 2.4V, Gate Type: N-Channel, P-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Low-Side, Channel Type: Independent, Rise / Fall Time (Typ): 7.5ns, 10ns, Supplier Device Package: 8-SOIC, Input Type: Inverting, Non-Inverting, Voltage - Supply: 4.5V ~ 18V, Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.
Preis ISL89412IBZ ab 0 EUR bis 0 EUR
 Hersteller: Renesas Electronics America Inc. Description: IC DRVR MOSFET DUAL-CH 8-SOIC Part Status: Active Current - Peak Output (Source, Sink): 2A, 2A Logic Voltage - VIL, VIH: 0.8V, 2.4V Gate Type: N-Channel, P-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 7.5ns, 10ns Supplier Device Package: 8-SOIC Input Type: Inverting, Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk 
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