ISL89412IBZ

ISL89412IBZ

ISL89412IBZ

Hersteller: Renesas / Intersil
Gate Drivers COMP MOSFET DRVR MODIFIED EL7222 8LD
REN_isl89410_11_12_DST_20021108-1529499.pdf
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auf Bestellung 5386 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details ISL89412IBZ

Description: IC DRVR MOSFET DUAL-CH 8-SOIC, Part Status: Active, Current - Peak Output (Source, Sink): 2A, 2A, Logic Voltage - VIL, VIH: 0.8V, 2.4V, Gate Type: N-Channel, P-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Low-Side, Channel Type: Independent, Rise / Fall Time (Typ): 7.5ns, 10ns, Supplier Device Package: 8-SOIC, Input Type: Inverting, Non-Inverting, Voltage - Supply: 4.5V ~ 18V, Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.

Preis ISL89412IBZ ab 0 EUR bis 0 EUR

ISL89412IBZ
ISL89412IBZ
Hersteller: Renesas Electronics America Inc.
Description: IC DRVR MOSFET DUAL-CH 8-SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 7.5ns, 10ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
isl89410-11-12.pdf
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