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ISL9N302AP3

ISL9N302AP3 ON Semiconductor


isl9n302ap3.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Tube
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Technische Details ISL9N302AP3 ON Semiconductor

Description: MOSFET N-CH 30V 75A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V, Power Dissipation (Max): 345W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V.

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ISL9N302AP3 ISL9N302AP3 Hersteller : onsemi ISL9N302AP3.pdf Description: MOSFET N-CH 30V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V
Power Dissipation (Max): 345W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V
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ISL9N302AP3 ISL9N302AP3 Hersteller : onsemi / Fairchild ISL9N302AP3.pdf MOSFET N-Channel PWM Logic Level
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