ISO5851DW Texas Instruments
Hersteller: Texas InstrumentsDescription: DGTL ISO 5.7KV 1CH GT DVR 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 2.7A, 5.5A
Technology: Capacitive Coupling
Current - Output High, Low: 1.5A, 3.4A
Voltage - Isolation: 5700Vrms
Approval Agency: CQC, CSA, UR, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 20ns, 20ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 110ns, 110ns
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 4947 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.6 EUR |
| 10+ | 14.09 EUR |
| 40+ | 13.44 EUR |
| 120+ | 11.67 EUR |
| 280+ | 11.14 EUR |
| 520+ | 10.16 EUR |
| 1000+ | 8.85 EUR |
| 2520+ | 8.52 EUR |
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Technische Details ISO5851DW Texas Instruments
Category: MOSFET/IGBT drivers, Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A, Supply voltage: 15...30V DC, Mounting: SMD, Input voltage: 3...5.5V, Output current: -5...2.5A, Type of integrated circuit: driver, Protection: undervoltage UVP, Operating temperature: -40...125°C, Integrated circuit features: galvanically isolated, Pulse fall time: 37ns, Insulation voltage: 5.7kV, Kind of package: tube, Case: SO16-W, Kind of integrated circuit: gate driver; high-/low-side, Number of channels: 2, Impulse rise time: 35ns, Topology: IGBT half-bridge; MOSFET half-bridge, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote ISO5851DW nach Preis ab 9.33 EUR bis 16.85 EUR
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ISO5851DW | Hersteller : Texas Instruments |
Isolated Gate Drivers 2.5-A / 5-A 5.7-kV RMS single channel isolated gate driver with protection features 16-SOIC -40 to 125 |
auf Bestellung 5135 Stücke: Lieferzeit 14-28 Tag (e) |
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ISO5851DW | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A Supply voltage: 15...30V DC Mounting: SMD Input voltage: 3...5.5V Output current: -5...2.5A Type of integrated circuit: driver Protection: undervoltage UVP Operating temperature: -40...125°C Integrated circuit features: galvanically isolated Pulse fall time: 37ns Insulation voltage: 5.7kV Kind of package: tube Case: SO16-W Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Impulse rise time: 35ns Topology: IGBT half-bridge; MOSFET half-bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ISO5851DW | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A Supply voltage: 15...30V DC Mounting: SMD Input voltage: 3...5.5V Output current: -5...2.5A Type of integrated circuit: driver Protection: undervoltage UVP Operating temperature: -40...125°C Integrated circuit features: galvanically isolated Pulse fall time: 37ns Insulation voltage: 5.7kV Kind of package: tube Case: SO16-W Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Impulse rise time: 35ns Topology: IGBT half-bridge; MOSFET half-bridge |
Produkt ist nicht verfügbar |