IXFK50N50 Ixys Semiconductor GmbH


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Technische Details IXFK50N50 Ixys Semiconductor GmbH

Description: MOSFET N-CH 500V 50A TO-264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 10V, Power Dissipation (Max): 560W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V.

Weitere Produktangebote IXFK50N50

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IXFK50N50 IXFK50N50 Hersteller : Littelfuse 97502.pdf Trans MOSFET N-CH Si 500V 50A 3-Pin(3+Tab) TO-264AA
Produkt ist nicht verfügbar
IXFK50N50 IXFK50N50 Hersteller : IXYS IXF(N,K)55N50, 50N50.pdf Description: MOSFET N-CH 500V 50A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
IXFK50N50 IXFK50N50 Hersteller : IXYS IXF(N,K)55N50, 50N50.pdf MOSFET 50 Amps 500V 0.1 Rds
Produkt ist nicht verfügbar