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IXTA8N65X2

IXTA8N65X2 IXYS


IXT_8N65X2.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+2.95 EUR
28+ 2.62 EUR
31+ 2.33 EUR
33+ 2.2 EUR
50+ 2.19 EUR
Mindestbestellmenge: 25
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Technische Details IXTA8N65X2 IXYS

Description: MOSFET N-CH 650V 8A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.

Weitere Produktangebote IXTA8N65X2 nach Preis ab 2.19 EUR bis 7.72 EUR

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IXTA8N65X2 IXTA8N65X2 Hersteller : IXYS IXT_8N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
25+2.95 EUR
28+ 2.62 EUR
31+ 2.33 EUR
33+ 2.2 EUR
50+ 2.19 EUR
Mindestbestellmenge: 25
IXTA8N65X2 IXTA8N65X2 Hersteller : IXYS a Description: MOSFET N-CH 650V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 2230 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.67 EUR
50+ 6.07 EUR
100+ 5.2 EUR
500+ 4.62 EUR
1000+ 3.96 EUR
2000+ 3.73 EUR
Mindestbestellmenge: 4
IXTA8N65X2 IXTA8N65X2 Hersteller : IXYS media-3320944.pdf MOSFET MSFT N-CH ULTRA JNCT X2 3&44
auf Bestellung 247 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.72 EUR
10+ 7.05 EUR
50+ 6.08 EUR
100+ 5.36 EUR
250+ 4.89 EUR
500+ 4.47 EUR
1000+ 4.03 EUR
Mindestbestellmenge: 7
IXTA8N65X2 IXTA8N65X2 Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 650V 8A 3-Pin(2+Tab) TO-263AA
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