JAN1N3595-1 Microchip / Microsemi
auf Bestellung 110 Stücke:
Lieferzeit 189-203 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.23 EUR |
| 100+ | 4.86 EUR |
| 250+ | 4.84 EUR |
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Technische Details JAN1N3595-1 Microchip / Microsemi
Description: DIODE GEN PURP 125V 150MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 3 µs, Technology: Standard, Current - Average Rectified (Io): 150mA, Supplier Device Package: DO-35, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 125 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 1 nA @ 125 V, Grade: Military, Qualification: MIL-PRF-19500/241.
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JAN1N3595-1 | Hersteller : Microchip Technology |
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JAN1N3595-1 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 125V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 |
Produkt ist nicht verfügbar |