JAN1N5196 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 225V 100MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 250 V
Grade: Military
Qualification: MIL-PRF-19500/118
Description: DIODE GEN PURP 225V 100MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 250 V
Grade: Military
Qualification: MIL-PRF-19500/118
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Technische Details JAN1N5196 Microchip Technology
Description: DIODE GEN PURP 225V 100MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Current - Average Rectified (Io): 100mA, Supplier Device Package: DO-204AH (DO-35), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 225 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 µA @ 250 V, Grade: Military, Qualification: MIL-PRF-19500/118.
Weitere Produktangebote JAN1N5196
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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JAN1N5196 | Hersteller : Microchip / Microsemi | Rectifiers Signal or Computer Diode |
Produkt ist nicht verfügbar |