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Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 14.98 EUR |
| 100+ | 13.91 EUR |
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Technische Details JAN1N5415 Microchip / Microsemi
Description: DIODE GEN PURP 50V 3A AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 50 V, Qualification: MIL-PRF-19500/411.
Weitere Produktangebote JAN1N5415
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN1N5415 | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 50V 3A AXIALPackaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V Qualification: MIL-PRF-19500/411 |
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