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Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 13.73 EUR |
| 100+ | 12.77 EUR |
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Technische Details JAN1N5551 Microchip / Microsemi
Description: DIODE GEN PURP 400V 3A AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V, Grade: Military, Qualification: MIL-PRF-19500/420.
Weitere Produktangebote JAN1N5551
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN1N5551 | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 400V 3A AXIALPackaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Grade: Military Qualification: MIL-PRF-19500/420 |
Produkt ist nicht verfügbar |
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| JAN1N5551 | Hersteller : Semtech Corporation |
Description: DIODE GEN PURP 400V 5A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 92pF @ 5V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: Axial Grade: Military Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: MIL-PRF-19500/420 |
Produkt ist nicht verfügbar |