JAN1N5616/TR Microchip Technology
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Technische Details JAN1N5616/TR Microchip Technology
Description: DIODE GEN PURP 400V 1A A AXIAL, Packaging: Tape & Reel (TR), Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 200°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 400 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN1N5616/TR | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 400V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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JAN1N5616/TR | Hersteller : Microchip / Microsemi | Rectifiers Rectifier |
Produkt ist nicht verfügbar |