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JAN1N5711UBCC

JAN1N5711UBCC Microchip Technology


Hersteller: Microchip Technology
Description: DIODE ARRAY SCHOTTKY 50V 33MA UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 33mA
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: MIL-PRF-19500/444
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Technische Details JAN1N5711UBCC Microchip Technology

Description: DIODE ARRAY SCHOTTKY 50V 33MA UB, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 33mA, Supplier Device Package: UB, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA, Current - Reverse Leakage @ Vr: 200 nA @ 50 V, Qualification: MIL-PRF-19500/444.

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JAN1N5711UBCC Hersteller : Microchip / Microsemi LDS_0040_2-1593027.pdf Schottky Diodes & Rectifiers Small-Signal Schottky
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