JAN1N649-1

JAN1N649-1

Hersteller: Microchip / Microsemi
Rectifiers Switching Diode
1N649-1-1593459.pdf
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Technische Details JAN1N649-1

Description: DIODE GEN PURP 600V 400MA DO35, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-35, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Current - Reverse Leakage @ Vr: 50nA @ 600V, Speed: Standard Recovery >500ns, > 200mA (Io), Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA, Current - Average Rectified (Io): 400mA, Voltage - DC Reverse (Vr) (Max): 600V, Diode Type: Standard.

Preis JAN1N649-1 ab 0 EUR bis 0 EUR

JAN1N649-1
Hersteller: Microsemi HI-REL [MIL]
Description: DIODE GEN PURP 600V 400MA DO35
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 50nA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 400mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
5889-1n649-1-pdf
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