JAN1N649-1
verfügbar/auf Bestellung
auf Bestellung 40 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 40 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details JAN1N649-1
Description: DIODE GEN PURP 600V 400MA DO35, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-35, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Current - Reverse Leakage @ Vr: 50nA @ 600V, Speed: Standard Recovery >500ns, > 200mA (Io), Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA, Current - Average Rectified (Io): 400mA, Voltage - DC Reverse (Vr) (Max): 600V, Diode Type: Standard.
Preis JAN1N649-1 ab 0 EUR bis 0 EUR
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JAN1N649-1 Hersteller: Microsemi HI-REL [MIL] Description: DIODE GEN PURP 600V 400MA DO35 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-35 Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 50nA @ 600V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Current - Average Rectified (Io): 400mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard 
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