JAN1N6620US Microchip Technology

Description: DIODE GEN PURP 220V 2A D-5A, Packaging: Bulk, Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 10V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 220 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A, Current - Reverse Leakage @ Vr: 500 nA @ 220 V.