JAN1N6621U

JAN1N6621U Microsemi Corporation


Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 1.2A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Qualification: MIL-PRF-19500/585
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Technische Details JAN1N6621U Microsemi Corporation

Description: DIODE GEN PURP 400V 1.2A D-5A, Packaging: Bulk, Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 1.2A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A, Current - Reverse Leakage @ Vr: 500 nA @ 400 V, Qualification: MIL-PRF-19500/585.