Jan2N2221AUB

Jan2N2221AUB Microsemi Corporation


2N2221A%2C%202N2222A.pdf Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details Jan2N2221AUB Microsemi Corporation

Description: TRANS NPN 50V 0.8A UB, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: UB, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW, Grade: Military, Qualification: MIL-PRF-19500/255.

Weitere Produktangebote Jan2N2221AUB

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
Jan2N2221AUB Hersteller : Microchip / Microsemi LDS_0060-1593857.pdf Bipolar Transistors - BJT 40 V Small-Signal BJT
Produkt ist nicht verfügbar