Technische Details JAN2N3735 MOTOROLA
Description: TRANS NPN 40V 1.5A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V, Supplier Device Package: TO-39, Grade: Military, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/395.
Weitere Produktangebote JAN2N3735
Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN2N3735 | Hersteller : Microchip Technology |
Description: TRANS NPN 40V 1.5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: TO-39 Grade: Military Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/395 |
Produkt ist nicht verfügbar |
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JAN2N3735 | Hersteller : Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |