JAN2N4449UA Microchip Technology
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Technische Details JAN2N4449UA Microchip Technology
Description: SMALL-SIGNAL BJT, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 400nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V, Supplier Device Package: UA, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 500 mW, Grade: Military, Qualification: MIL-PRF-19500/317.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN2N4449UA | Hersteller : Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/317 |
Produkt ist nicht verfügbar |
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JAN2N4449UA | Hersteller : Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |