JAN2N4449UB

JAN2N4449UB Microchip Technology


2n2369a.pdf Hersteller: Microchip Technology
Trans GP BJT NPN 20V 400mW 4-Pin Case UB
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Technische Details JAN2N4449UB Microchip Technology

Description: SMALL-SIGNAL BJT, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 400nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V, Supplier Device Package: UB, Grade: Military, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 400 mW, Qualification: MIL-PRF-19500/317.

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JAN2N4449UB JAN2N4449UB Hersteller : Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/317
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JAN2N4449UB Hersteller : Microchip / Microsemi 2N2369A-3224187.pdf Bipolar Transistors - BJT Small-Signal BJT
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