Technische Details JAN2N5582 MOTOROLA
Description: TRANS NPN 50V 0.8A TO46-3, Packaging: Bulk, Package / Case: TO-206AB, TO-46-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-46-3, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW, Grade: Military, Qualification: MIL-PRF-19500/423.
Weitere Produktangebote JAN2N5582
Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN2N5582 | Hersteller : Microchip Technology |
Description: TRANS NPN 50V 0.8A TO46-3 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-46-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/423 |
Produkt ist nicht verfügbar |
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JAN2N5582 | Hersteller : Microchip / Microsemi | Bipolar Transistors - BJT BJTs |
Produkt ist nicht verfügbar |