JAN2N5667 Microchip / Microsemi


LDS_0062-1593858.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT
auf Bestellung 131 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+42.67 EUR
25+ 42.64 EUR
100+ 39.62 EUR
Mindestbestellmenge: 2
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Technische Details JAN2N5667 Microchip / Microsemi

Description: TRANS NPN 300V 5A TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A, Current - Collector Cutoff (Max): 200nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V, Supplier Device Package: TO-5, Grade: Military, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1.2 W, Qualification: MIL-PRF-19500/455.

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JAN2N5667 2N5664-65,66(S,U3),67(S).pdf
auf Bestellung 367 Stücke:
Lieferzeit 21-28 Tag (e)
JAN2N5667 Hersteller : Microchip Technology 2N5664-65,66(S,U3),67(S).pdf Description: TRANS NPN 300V 5A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
Qualification: MIL-PRF-19500/455
Produkt ist nicht verfügbar