Technische Details JAN2N6193 MOTOROLA
Description: TRANS PNP 100V 5A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/561.
Weitere Produktangebote JAN2N6193
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN2N6193 | Hersteller : Microchip Technology |
 Trans GP BJT PNP 100V 5A 1000mW 3-Pin TO-39 Bag |
Produkt ist nicht verfügbar |
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JAN2N6193 | Hersteller : Semicoa Semiconductors |
Trans GP BJT PNP 100V 5A 3-Pin TO-39 |
Produkt ist nicht verfügbar |
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| JAN2N6193 | Hersteller : Microsemi |
Trans GP BJT PNP 100V 5A 1000mW 3-Pin TO-39 Bag |
Produkt ist nicht verfügbar |
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JAN2N6193 | Hersteller : Microchip Technology |
Description: TRANS PNP 100V 5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W Qualification: MIL-PRF-19500/561 |
Produkt ist nicht verfügbar |