JAN2N6300
Hersteller: auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details JAN2N6300
Description: TRANS NPN DARL 60V 8A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A, Current - Collector Cutoff (Max): 500µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V, Supplier Device Package: TO-66 (TO-213AA), Grade: Military, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 75 W, Qualification: MIL-PRF-19500/539.
Weitere Produktangebote JAN2N6300
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| JAN2N6300 | Hersteller : Microchip Technology |
Description: TRANS NPN DARL 60V 8A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 75 W Qualification: MIL-PRF-19500/539 |
Produkt ist nicht verfügbar |
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| JAN2N6300 | Hersteller : Microsemi |
Darlington Transistors Power BJT |
Produkt ist nicht verfügbar |