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Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 125.68 EUR |
| 100+ | 116.71 EUR |
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Technische Details JANS1N5420 Microchip / Microsemi
Description: DIODE GEN PURP 600V 4.5A AXIAL, Packaging: Bulk, Package / Case: Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 400 ns, Technology: Standard, Capacitance @ Vr, F: 120pF @ 4V, 1MHz, Current - Average Rectified (Io): 4.5A, Supplier Device Package: Axial, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.
Weitere Produktangebote JANS1N5420
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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JANS1N5420 | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 600V 3A B AXIALPackaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A |
Produkt ist nicht verfügbar |
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| JANS1N5420 | Hersteller : Semtech Corporation |
Description: DIODE GEN PURP 600V 4.5A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Capacitance @ Vr, F: 120pF @ 4V, 1MHz Current - Average Rectified (Io): 4.5A Supplier Device Package: Axial Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |