JANS1N5711-1 Microchip Technology


31968865-lds-0040-pdf.pdf Hersteller: Microchip Technology
Schottky Barrier Diode
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Technische Details JANS1N5711-1 Microchip Technology

Description: DIODE SCHOTTKY 70V 33MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 33mA, Supplier Device Package: DO-35 (DO-204AH), Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 70 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA, Current - Reverse Leakage @ Vr: 200 nA @ 50 V, Qualification: MIL-PRF-19500/444.

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JANS1N5711-1 JANS1N5711-1 Hersteller : Microchip Technology Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: MIL-PRF-19500/444
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JANS1N5711-1 Hersteller : Microchip / Microsemi Schottky Diodes & Rectifiers Small-Signal Schottky
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