JANTX1N3595US/TR Microchip Technology
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Technische Details JANTX1N3595US/TR Microchip Technology
Description: DIODE GEN PURP 200MA B SQ-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 3 µs, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 1 nA @ 125 V, Qualification: MIL-S-19500-241.
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JANTX1N3595US/TR | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 200MA B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Qualification: MIL-S-19500-241 |
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JANTX1N3595US/TR | Hersteller : Microchip / Microsemi |
 Rectifiers Signal or Computer Diode |
Produkt ist nicht verfügbar |