JANTX1N5196 Microchip / Microsemi
auf Bestellung 9 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 106.63 EUR |
500+ | 99.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details JANTX1N5196 Microchip / Microsemi
Description: DIODE GEN PURP 225V 200MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-35, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 225 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 1 µA @ 250 V, Grade: Military, Qualification: MIL-PRF-19500/118.
Weitere Produktangebote JANTX1N5196
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
JANTX1N5196 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 225V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 225 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 250 V Grade: Military Qualification: MIL-PRF-19500/118 |
Produkt ist nicht verfügbar |