JANTX1N5553US/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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Technische Details JANTX1N5553US/TR Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, E, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: D-5B, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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JANTX1N5553US/TR | Hersteller : Microchip / Microsemi |
 Rectifiers Rectifier |
Produkt ist nicht verfügbar |