Technische Details JANTX1N6622 MICROSEMI
Description: DIODE GEN PURP 660V 2A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 10V, 1MHz, Current - Average Rectified (Io): 2A, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 660 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A, Current - Reverse Leakage @ Vr: 500 nA @ 660 V.
Weitere Produktangebote JANTX1N6622
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JANTX1N6622 | Hersteller : Sensitron Semiconductors |
 Rectifier Diode Switching 600V 1.2A 30ns 2-Pin Case 106 |
Produkt ist nicht verfügbar |
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JANTX1N6622 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 660V 2A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 660 V |
Produkt ist nicht verfügbar |
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JANTX1N6622 | Hersteller : Microchip / Microsemi |
Rectifiers Rectifier |
Produkt ist nicht verfügbar |