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JANTX2N2222AUB/TR Microchip / Microsemi


LDS_0060-1593857.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 50 V Small-Signal BJT
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Lieferzeit 14-28 Tag (e)
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4+14.12 EUR
126+ 13.1 EUR
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Technische Details JANTX2N2222AUB/TR Microchip / Microsemi

Description: TRANS NPN 50V 0.8A UB, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UB, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW, Grade: Military, Qualification: MIL-PRF-19500/255.

Weitere Produktangebote JANTX2N2222AUB/TR

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JANTX2N2222AUB/TR JANTX2N2222AUB/TR Hersteller : Microchip Technology lds-0060.pdf Trans GP BJT NPN 50V 0.8A 500mW 4-Pin Case UB T/R
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JANTX2N2222AUB/TR JANTX2N2222AUB/TR Hersteller : Microchip Technology 8898-lds-0060-datasheet Description: TRANS NPN 50V 0.8A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar