Produkte > SEMICOA > JANTX2N2857UB
JANTX2N2857UB

JANTX2N2857UB Semicoa


196165097220615prf19500ss343.pdf Hersteller: Semicoa
NPN, silicon, low power, encapsulated and unencapsulated, radiation hardness assurance
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details JANTX2N2857UB Semicoa

Description: RF TRANS NPN 15V 0.04A UB, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Gain: 21dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 40mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V, Noise Figure (dB Typ @ f): 4.5dB @ 450MHz, Supplier Device Package: UB, Part Status: Obsolete.

Weitere Produktangebote JANTX2N2857UB

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
JANTX2N2857UB JANTX2N2857UB Hersteller : Microsemi Corporation 124246-lds-0223-1-datasheet Description: RF TRANS NPN 15V 0.04A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 21dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Supplier Device Package: UB
Part Status: Obsolete
Produkt ist nicht verfügbar