Jantx2N3868S Microchip / Microsemi
auf Bestellung 65 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 81.69 EUR |
| 25+ | 81.67 EUR |
| 100+ | 75.84 EUR |
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Technische Details Jantx2N3868S Microchip / Microsemi
Description: TRANS PNP 60V 0.003A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Current - Collector (Ic) (Max): 3 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/350.
Weitere Produktangebote Jantx2N3868S
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Jantx2N3868S | Hersteller : Microchip Technology |
 Description: TRANS PNP 60V 0.003A TO39Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W Qualification: MIL-PRF-19500/350 |
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