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JANTXV1N5420 Microsemi


124360-lds-0231-datasheet 362.d73gLFwwstjqRE71eWY7ZjB7rlAMhCT2R1CbTTg Hersteller: Microsemi

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Technische Details JANTXV1N5420 Microsemi

Description: DIODE GEN PURP 600V 3A B AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.

Weitere Produktangebote JANTXV1N5420

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JANTXV1N5420 JANTXV1N5420 Hersteller : Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JANTXV1N5420 Hersteller : Semtech Corporation 362.d73gLFwwstjqRE71eWY7ZjB7rlAMhCT2R1CbTTg Description: DIODE GEN PURP 600V 4.5A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 4.5A
Supplier Device Package: Axial
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JANTXV1N5420 Hersteller : Microchip / Microsemi mscos04725_1-2275159.pdf Diodes - General Purpose, Power, Switching Rectifier
Produkt ist nicht verfügbar