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Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 18.15 EUR |
| 100+ | 16.82 EUR |
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Technische Details JANTXV1N5620 Microchip / Microsemi
Description: DIODE GEN PURP 800V 1A, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 200°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 800 V, Qualification: MIL-PRF-19500/427.
Weitere Produktangebote JANTXV1N5620
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JANTXV1N5620 | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 800V 1APackaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 800 V Qualification: MIL-PRF-19500/427 |
Produkt ist nicht verfügbar |
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| JANTXV1N5620 | Hersteller : Semtech Corporation |
Description: D MET 1A STD 800V HRV Packaging: Bulk |
Produkt ist nicht verfügbar |