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JANTXV1N6627US

JANTXV1N6627US Microchip Technology


11069-sd53a-datasheet Hersteller: Microchip Technology
Description: DIODE GEN PURP 440V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 440 V
Qualification: MIL-PRF-19500/590
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Technische Details JANTXV1N6627US Microchip Technology

Description: DIODE GEN PURP 440V 1.75A D-5B, Packaging: Bulk, Package / Case: SQ-MELF, E, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 40pF @ 10V, 1MHz, Current - Average Rectified (Io): 1.75A, Supplier Device Package: D-5B, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 440 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 440 V, Qualification: MIL-PRF-19500/590.

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JANTXV1N6627US JANTXV1N6627US Hersteller : Microchip / Microsemi mssds00559_1-2275765.pdf Rectifiers Rectifier
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