JANTXV1N6630US Microchip Technology

Description: DIODE GEN PURP 1KV 1.4A D-5B, Packaging: Bulk, Package / Case: SQ-MELF, E, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 1.4A, Supplier Device Package: D-5B, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A, Current - Reverse Leakage @ Vr: 2 µA @ 1000 V, Qualification: MIL-PRF-19500/590.