Produkte > MICROCHIP TECHNOLOGY > JANTXV2N5154U3
JANTXV2N5154U3

JANTXV2N5154U3 Microchip Technology


133993-jansr5154u3.pdf Hersteller: Microchip Technology
Trans GP BJT NPN 80V 2A 1000mW 3-Pin SMD-0.5 Tray
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details JANTXV2N5154U3 Microchip Technology

Description: TRANS NPN 80V 0.001A U3, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V, Supplier Device Package: U3 (SMD-0.5), Grade: Military, Current - Collector (Ic) (Max): 1 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/544.

Weitere Produktangebote JANTXV2N5154U3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
JANTXV2N5154U3 JANTXV2N5154U3 Hersteller : Microchip Technology Description: TRANS NPN 80V 0.001A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Grade: Military
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/544
Produkt ist nicht verfügbar
JANTXV2N5154U3 Hersteller : Microchip / Microsemi mslws00281_1-2275756.pdf Bipolar Transistors - BJT 80 V Power BJT
Produkt ist nicht verfügbar