Jantxv2N5415 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS PNP 200V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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Technische Details Jantxv2N5415 Microchip Technology
Description: TRANS PNP 200V 1A TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Supplier Device Package: TO-5, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 200 V, Power - Max: 750 mW, Grade: Military, Qualification: MIL-PRF-19500/485.
Weitere Produktangebote Jantxv2N5415
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
Jantxv2N5415 | Hersteller : Microchip / Microsemi | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |