Produkte > MICROCHIP TECHNOLOGY > Jantxv2N5667S
Jantxv2N5667S

Jantxv2N5667S Microchip Technology

2N5664-65,66(S,U3),67(S).pdf Hersteller: Microchip Technology
Description: TRANS NPN 300V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
Qualification: MIL-PRF-19500/455
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben

Technische Details Jantxv2N5667S Microchip Technology

Description: TRANS NPN 300V 5A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A, Current - Collector Cutoff (Max): 200nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1.2 W, Qualification: MIL-PRF-19500/455.