Technische Details JANTXV2N6782 HARRIS
Description: MOSFET N-CH 100V 3.5A TO205AF, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V, Power Dissipation (Max): 800mW (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-205AF (TO-39), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V.
Weitere Produktangebote JANTXV2N6782
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JANTXV2N6782 | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39 |
Produkt ist nicht verfügbar |
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| JANTXV2N6782 | Hersteller : Microsemi Corporation |
Description: MOSFET N-CH 100V 3.5A TO205AF Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-205AF (TO-39) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V |
Produkt ist nicht verfügbar |