JTDB25 Microsemi Corporation
Hersteller: Microsemi CorporationDescription: RF TRANS NPN 55V 1.215GHZ 55AW-1
Packaging: Bulk
Package / Case: 55AW-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7.5dB
Power - Max: 97W
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: 55AW-1
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Technische Details JTDB25 Microsemi Corporation
Description: RF TRANS NPN 55V 1.215GHZ 55AW-1, Packaging: Bulk, Package / Case: 55AW-1, Mounting Type: Chassis Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 7.5dB, Power - Max: 97W, Current - Collector (Ic) (Max): 5A, Voltage - Collector Emitter Breakdown (Max): 55V, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V, Frequency - Transition: 960MHz ~ 1.215GHz, Supplier Device Package: 55AW-1.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| JTDB25 | Hersteller : Microsemi |
RF Bipolar Transistors Avionics/Bipolar Transistor |
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