JAN2N3019

JAN2N3019 Microchip / Microsemi


lds_0185-1592883.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 71 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+22.1 EUR
25+ 22.07 EUR
100+ 20.59 EUR
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Technische Details JAN2N3019 Microchip / Microsemi

Description: TRANS NPN 80V 1A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Supplier Device Package: TO-39, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 800 mW, Grade: Military, Qualification: MIL-PRF-19500/391.

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JAN2N3019 Hersteller : MOTOROLA 122693-lds-0185-datasheet
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Lieferzeit 21-28 Tag (e)
JAN2N3019 JAN2N3019 Hersteller : Microchip Technology 122693-lds-0185-datasheet Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/391
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