JANTX2N3019 Microchip / Microsemi
auf Bestellung 161 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 23.14 EUR |
| 100+ | 21.5 EUR |
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Technische Details JANTX2N3019 Microchip / Microsemi
Description: TRANS NPN 80V 1A TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Supplier Device Package: TO-5, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/391.
Weitere Produktangebote JANTX2N3019
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| JANTX2N3019 | Hersteller : MICROSEMI |
 TO-5/LOW POWER NPN SILICON TRANSISTOR 2N3019Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-21 Tag (e) |
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JANTX2N3019 | Hersteller : Microchip Technology |
Description: TRANS NPN 80V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: TO-5 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW Qualification: MIL-PRF-19500/391 |
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