JANTX2N3019S Microchip / Microsemi
auf Bestellung 499 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 20.96 EUR |
| 100+ | 19.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details JANTX2N3019S Microchip / Microsemi
Description: TRANS NPN 80V 1A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Supplier Device Package: TO-39, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 800 mW, Grade: Military, Qualification: MIL-PRF-19500/391.
Weitere Produktangebote JANTX2N3019S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
JANTX2N3019S | Hersteller : Semicoa |
 Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 |
Produkt ist nicht verfügbar |
|
| JANTX2N3019S | Hersteller : MICROSEMI |
TO-39/LOW POWER NPN SILICON TRANSISTOR 2N3019 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
JANTX2N3019S | Hersteller : Microchip Technology |
Description: TRANS NPN 80V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Supplier Device Package: TO-39 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/391 |
Produkt ist nicht verfügbar |