JANTX2N3767 Microchip / Microsemi


2N3766-2886107.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 80V 4A NPN Power BJT THT
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Lieferzeit 14-28 Tag (e)
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100+ 62.4 EUR
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Technische Details JANTX2N3767 Microchip / Microsemi

Description: NPN TRANSISTOR, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C, Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V, Supplier Device Package: TO-66 (TO-213AA), Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 25 W, Qualification: MIL-PRF-19500/518.

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JANTX2N3767 Hersteller : MSC 6054-2n3766-datasheet
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Lieferzeit 21-28 Tag (e)
JANTX2N3767 Hersteller : Microchip Technology 6054-2n3766-datasheet Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/518
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