JANTX2N3868

JANTX2N3868 Microchip / Microsemi


LDS_0170-1651808.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT
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Lieferzeit 14-28 Tag (e)
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100+ 56.37 EUR
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Technische Details JANTX2N3868 Microchip / Microsemi

Description: TRANS PNP 60V 0.003A TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V, Supplier Device Package: TO-5, Grade: Military, Current - Collector (Ic) (Max): 3 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/350.

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JANTX2N3868 Hersteller : MOTOROLA 77282-lds-0170-datasheet
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JANTX2N3868 JANTX2N3868 Hersteller : Microchip Technology 77282-lds-0170-datasheet Description: TRANS PNP 60V 0.003A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/350
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