JANTX2N7371 Microchip Technology


Hersteller: Microchip Technology
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details JANTX2N7371 Microchip Technology

Description: TRANS PNP DARL 100V 0.001A TO254, Packaging: Bulk, Package / Case: TO-254-3, TO-254AA, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V, Supplier Device Package: TO-254, Part Status: Active, Current - Collector (Ic) (Max): 1 mA, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 100 W, Grade: Military, Qualification: MIL-PRF-19500/623.

Weitere Produktangebote JANTX2N7371

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
JANTX2N7371 Hersteller : Microchip Technology mslws00909_1-2275815.pdf Bipolar Transistors - BJT Power BJT
Produkt ist nicht verfügbar