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JANTXV2N2907AUB/TR Microchip Technology


lds-0059.pdf Hersteller: Microchip Technology
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Technische Details JANTXV2N2907AUB/TR Microchip Technology

Description: TRANS PNP 60V 0.6A UB, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UB, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 500 mW, Grade: Military, Qualification: MIL-PRF-19500/291.

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JANTXV2N2907AUB/TR JANTXV2N2907AUB/TR Hersteller : Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
JANTXV2N2907AUB/TR JANTXV2N2907AUB/TR Hersteller : Microchip / Microsemi LDS_0059-1593948.pdf Bipolar Transistors - BJT RH Small-Signal BJT _ UB
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